New Semiconductor Technology Could Supercharge 6G Delivery
A team at the University of Bristol developed SLCFETs, a breakthrough transistor structure that leverages a latch effect in GaN materials to enhance speed and power, advancing the future of…
A team at the University of Bristol developed SLCFETs, a breakthrough transistor structure that leverages a latch effect in GaN materials to enhance speed and power, advancing the future of…